Datasheet GS66508T (GaN Systems) - 5
| Производитель | GaN Systems |
| Описание | 650V Enhancement Mode GaN Transistor |
| Страниц / Страница | 17 / 5 — Electrical Performance Graphs |
| Формат / Размер файла | PDF / 1.0 Мб |
| Язык документа | английский |
Electrical Performance Graphs
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Текстовая версия документа
GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Electrical Performance Graphs
GS66508T IDS vs. VDS Characteristic GS66508T IDS vs. VDS Characteristic Figure 1: Typical IDS vs. VDS @ TJ = 25 ⁰C Figure 2: Typical IDS vs. VDS @ TJ = 150 ⁰C RDS(on) vs. IDS Characteristic RDS(on) vs. IDS Characteristic Figure 3: RDS(on) vs. IDS at TJ = 25 ⁰C Figure 4: RDS(on) vs. IDS at TJ = 150⁰C Rev 180424 © 2009-2018 GaN Systems Inc. 5 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback
