Datasheet GS66508T (GaN Systems) - 6
| Производитель | GaN Systems |
| Описание | 650V Enhancement Mode GaN Transistor |
| Страниц / Страница | 17 / 6 — Electrical Performance Graphs |
| Формат / Размер файла | PDF / 1.0 Мб |
| Язык документа | английский |
Electrical Performance Graphs
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Текстовая версия документа
GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Electrical Performance Graphs
GS66508T IDS vs. VDS, TJ dependence GS66508T Gate Charge, QG Characteristic Figure 5: Typical IDS vs. VDS @ VGS = 6 V Figure 6: Typical VGS vs. QG @ VDS = 100, 400 V GS66508T Capacitance Characteristics GS66508T Stored Energy Characteristic Figure 7: Typical CISS, COSS, CRSS vs. VDS Figure 8: Typical COSS Stored Energy Rev 180424 © 2009-2018 GaN Systems Inc. 6 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback
