Datasheet GS66508T (GaN Systems) - 7
| Производитель | GaN Systems |
| Описание | 650V Enhancement Mode GaN Transistor |
| Страниц / Страница | 17 / 7 — Electrical Performance Graphs |
| Формат / Размер файла | PDF / 1.0 Мб |
| Язык документа | английский |
Electrical Performance Graphs
Модельный ряд для этого даташита
Текстовая версия документа
GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Electrical Performance Graphs
GS66508T Reverse Conduction Characteristics GS66508T ID vs. VGS Characteristic Figure 9: Typical ISD vs. VSD Figure 10: Typical IDS vs. VGS R GS66508T ID-VDS SOA DS(on) Temperature Dependence Figure 11: Normalized RDS(on) as a function of TJ Figure 12: Safe Operating Area @ Tcase = 25 °C Rev 180424 © 2009-2018 GaN Systems Inc. 7 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback
