Datasheet MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G (ON Semiconductor)

link to page 2 MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G Schottky Power Rectifier
www.onsemi.com Surface Mount Power Package SCHOTTKY BARRIER
Schottky Power Rectifiers employ the use of the Schottky Barrier
RECTIFIER
principle in a large area metal-to-silicon power diode. State-of-the-art
1.0 AMPERE
geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency
90, 100 VOLTS
rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features:
Features SMB
• Small Compact Surface Mountable Package with J-Bend Leads
CASE 403A
• Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction
MARKING DIAGRAM
• High Blocking Voltage − 100 Volts • 175°C Operating Junction Temperature AYWW • Guardring for Stress Protection B1xG • G AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices
Mechanical Characteristics
B1 = Device Code • x = C for MBRS1100T3 Case: Epoxy, Molded 9 for MBRS190T3 • Weight: 95 mg (approximately) A = Assembly Location** • Y = Year Finish: All External Surfaces Corrosion Resistant and Terminal WW = Work Week Leads are Readily Solderable G = Pb−Free Package • Lead and Mounting Surface Temperature for Soldering Purposes: (Note: Microdot may be in either location) 260°C Max. for 10 Seconds **The Assembly Location code (A) is front side • Shipped in 12 mm Tape and Reel, 2,500 units per reel optional. In cases where the Assembly Location is • stamped in the package, the front side assembly code Cathode Polarity Band may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2018 − Rev. 13 MBRS1100T3/D