Datasheet MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G (ON Semiconductor) - 3

MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G TYPICAL ELECTRICAL CHARACTERISTICS
20 1k (AMPS) 400 10 200 ) 5 TJ = 150°C A 100 TJ = 150°C μ ( 40 125°C 2 20 100 ARD CURRENT °C 10 100°C 1 W 4 0.5 25°C 2 1 0.2 0.4 , REVERSE CURRENT ANEOUS FOR 0.2 0.1 I R 0.1 ANT 0.05 0.04 0.02 25°C F 0.02 i , INST 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 30 40 50 60 70 80 90 100 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 3.2 2.0 TTS) A 2.8 (AMPS) T DC J = 100°C TION (W 2.4 A 1.5 2.0 SQUARE 1.6 ARD CURRENT WAVE W 1.0 SQUARE WAVE 1.2 DC 0.8 0.5 VERAGE POWER DISSIP A VERAGE FOR A 0.4 V) V) , F(AP 0 I , F(A 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 145 150 155 160 165 170 175 180 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C)
Figure 3. Power Dissipation Figure 4. Current Derating, Lead
280 260 240 NOTE: TYPICAL CAPACITANCE 220 NOTE: AT 0 V = 270 pF 200 180 160 ANCE (pF) 140 120 ACIT 100 80 C, CAP 60 40 20 0 0.1 0.2 0.5 1 2 5 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance www.onsemi.com 3