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Datasheet C3M0016120K (Wolfspeed) - 7

ПроизводительWolfspeed
ОписаниеSilicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Страниц / Страница12 / 7 — Typical Performance. 120. 600. Conditions:. (A). TJ ≤ 175 °C. ) 100. 500. …
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Язык документаанглийский

Typical Performance. 120. 600. Conditions:. (A). TJ ≤ 175 °C. ) 100. 500. (DC. (W). er, P tot 400. Current, I DS us 60. ted Pow 300. Dissipa

Typical Performance 120 600 Conditions: (A) TJ ≤ 175 °C ) 100 500 (DC (W) er, P tot 400 Current, I DS us 60 ted Pow 300 Dissipa

22 предложений от 13 поставщиков
SICFET N-CH 1.2KV 115A TO247-4 / N-Channel 1200 V 115A (Tc) 556W (Tc) Through Hole TO-247-4L
ChipWorker
Весь мир
C3M0016120K
Wolfspeed
5 216 ₽
Элитан
Россия
C3M0016120K1
Wolfspeed
7 413 ₽
C3M0016120K
от 16 734 ₽
T-electron
Россия и страны СНГ
C3M0016120K
422 675 ₽

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Текстовая версия документа

Typical Performance 120 600 Conditions: Conditions: (A) TJ ≤ 175 °C TJ ≤ 175 °C ) 100 500 (DC (W) 80 er, P tot 400 Current, I DS us 60 ted Pow 300 40 Dissipa ce Contino 200 um 20 in-Sour axim 100 M Dra 0 0 -55 -30 -5 20 45 70 95 120 145 170 -55 -30 -5 20 45 70 95 120 145 170 Case Temperature, TC (°C) Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Case Temperature
1 100.00 C/W) Limited by RDS On 10 µs o ( (A) 100 µs 0.5 1 ms t, I DS 10.00 100E-3 0.3 100 ms pedance, Z thJC 0.1 e Curren 1.00 0.05 10E-3 0.02 in-Sourc 0.01 Dra 0.10 ction To Case Im Conditions: T Jun SinglePulse C = 25 °C D = 0, Parameter: t p 1E-3 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 0.1 1 10 100 1000 Time, t Drain-Source Voltage, V p (s) DS (V)
Figure 21. Transient Thermal Impedance Figure 22. Safe Operating Area (Junction - Case)
2.5 4.0 Conditions: Conditions: ETotal TJ = 25 °C TJ = 25 °C V 3.5 DD = 600 V E V Total DD = 800 V 2.0 RG(ext) = 2.5 Ω RG(ext) = 2.5 Ω VGS = -4V/+15 V 3.0 VGS = -4V/+15 V FWD = C3M0016120K FWD = C3M0075120D EOn J) L = 57.6 μH L = 57.6 μH 1.5 J) 2.5 2.0 EOn 1.0 1.5 itching Loss (m itching Loss (m Sw Sw 1.0 0.5 EOff EOff 0.5 0.0 0.0 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 600V) Drain Current (V = 800V) DD DD
7
C3M0016120K Rev. -, 04-2019
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