Datasheet MMBT2222A, PZT2222A (ON Semiconductor) - 6

400 400
I B1 = I B2 = 320 Ic V cc = 25 V TIME (nS) TIME (nS) 240
160 240
ts 160 tr t off 80 tf 80 t on td 100
I CIC -COLLECTOR CURRENT (mA) 0
10 1000 PD -POWER DISSIPATION (W) 1 SOT-223
TO-92 0.5
SOT-23 0.25 0 0 25 50
75
100
o
TEMPERATURE ( C) 125 150 2 h re CHAR. RELATIVE TO VALUES AT VCE= 10V CHAR. RELATIVE TO VALUES AT TA = 25oC V CE = 10 V
I C = 10 mA h ie 1.6 h fe 1.2 h oe 0.8
0.4
0 0 20
40
60
80
T A -AMBIENT TEMPERATURE ( o C) 100 Figure 13. Common Emitter Characteristics © 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0 1000 8 V CE = 10 V
T A = 25oC 6
h oe 4
h re 2
h fe 0 h ie 0 10 20
30
40
50
I C -COLLECTOR CURRENT (mA) 60 Figure 12. Common Emitter Characteristics Figure 11. Power Dissipation vs.
Ambient Temperature 2.4 100
I CIC -COLLECTOR CURRENT (mA) Figure 10. Switching Times vs. Collector Current CHAR. RELATIVE TO VALUES AT I C= 10mA Figure 9. Turn-On and Turn-Off Times
vs. Collector Current 0.75 10 320 V cc = 25 V 0
10 Ic I B1 = I B2 = 10 1.3 I C = 10 mA
T A = 25oC 1.25
1.2 h fe 1.15
h ie 1.1
1.05
1 h re 0.95
0.9
0.85 h oe 0.8
0.75 0 5 10
15
20
25
30
VCE -COLLECTOR VOLTAGE (V) 35 Figure 14. Common Emitter Characteristics www.fairchildsemi.com
5 MMBT2222A / PZT2222A — NPN General-Purpose Amplifier Typical Performance Characteristics (Continued)