Datasheet PZT2907A (ON Semiconductor) - 2

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PZT2907A ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = −10 mAdc, IE = 0) −60 − − Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) −60 − − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = −10 mAdc, IC = 0) −5.0 − − Collector−Base Cutoff Current ICBO nAdc (VCB = −50 Vdc, IE = 0) − − −10 Collector−Emitter Cutoff Current ICEX nAdc (VCE = −30 Vdc, VBE = 0.5 Vdc) − − −50 Base−Emitter Cutoff Current IBEX nAdc (VCE = −30 Vdc, VBE = −0.5 Vdc) − − −50
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = −0.1 mAdc, VCE = −10 Vdc) 75 − − (IC = −1.0 mAdc, VCE = −10 Vdc) 100 − − (IC = −10 mAdc, VCE = −10 Vdc) 100 − − (IC = −150 mAdc, VCE = −10 Vdc) 100 − 300 (IC = −500 mAdc, VCE = −10 Vdc) 50 − − Collector-Emitter Saturation Voltages VCE(sat) Vdc (IC = −150 mAdc, IB = −15 mAdc) − − −0.4 (IC = − 500 mAdc, IB = −50 mAdc) − − −1.6 Base-Emitter Saturation Voltages VBE(sat) Vdc (IC = −150 mAdc, IB = −15 mAdc) − − −1.3 (IC = −500 mAdc, IB = −50 mAdc) − − −2.6
DYNAMIC CHARACTERISTICS
Current-Gain − Bandwidth Product fT MHz (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) 200 − − Output Capacitance Cc pF (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) − − 8.0 Input Capacitance Ce pF (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) − − 30
SWITCHING TIMES
Turn-On Time ton − − 45 ns (VCC = −30 Vdc, IC = −150 mAdc, Delay Time t I d − − 10 B1 = −15 mAdc) Rise Time tr − − 40 Turn-Off Time toff − − 100 ns (VCC = −6.0 Vdc, IC = −150 mAdc, Storage Time t I s − − 80 B1 = IB2 = −15 mAdc) Fall Time tf − − 30 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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