Силовой МОП-транзистор (MOSFET) третьего поколения IRF540 обеспечивает лучшие сочетания быстрого переключения, прочный дизайн транзистора, низкий уровень сопротивления. Корпус TO-220AB универсален для...
IRF540NS/IRF540NL 1000 VGS 1000 VGS TOP 15V TOP 15V 10V 10V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM 4.5V BOTTOM 4.5V 100 100 4.5V 10 4.5V 10 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 20µs PULSE WIDTH 20µs PULSE WIDTH T = J 25 °C T = 175 J °C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.5 ID = 33A ) 3.0 nt (A 2.5 urre C 2.0 T = 25 C J ° ource 100 -S 1.5 T = 175 C (Normalized) J ° rain-to 1.0 I , D D 0.5 (on) S V = DS 50V D 20µs PULSE WIDTH R , Drain-to-Source On Resistance V = GS 10V 0.0 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 4.0 5.0 6.0 7.0 8.0 9.0 T , Junction Temperature ( C ° ) V , Gate-to-Source Voltage (V) J GS Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3