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Datasheet IRFF9120, JANTX2N6845, JANTXV2N6845 (International Rectifier) - 2

ПроизводительInternational Rectifier
Описание100V, P-CHANNEL MOSFET TO-205AF (TO-39)
Страниц / Страница7 / 2 — IRFF9120. JANTX2N6845/JANTXV2N6845. Electrical Characteristics @ Tj = …
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Язык документаанглийский

IRFF9120. JANTX2N6845/JANTXV2N6845. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified). Symbol. Parameter Min

IRFF9120 JANTX2N6845/JANTXV2N6845 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol Parameter Min

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Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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IRFF9120 JANTX2N6845/JANTXV2N6845 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -1.0mA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.10 ––– V/°C Reference to 25°C, ID = -1.0mA ––– ––– 0.60 V R GS = -10V, ID2 = -2.6A  DS(on) Static Drain-to-Source On-Resistance  ––– ––– 0.65 VGS = -10V, ID1 = -4.0A  VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA   Gfs Forward Transconductance 1.25 ––– ––– S VDS = -15V, ID2 = -2.6A  IDSS ––– ––– -25 V Zero Gate Voltage Drain Current µA DS = -80V, VGS = 0V ––– ––– -250 VDS = -80V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Leakage Forward ––– ––– -100 V nA GS = -20V Gate-to-Source Leakage Reverse ––– ––– 100 VGS = 20V QG Total Gate Charge 4.3 ––– 16.3 ID1 = -4.0A QGS Gate-to-Source Charge 1.3 ––– 4.7 nC   VDS = -50V QGD Gate-to-Drain (‘Miller’) Charge 1.0 ––– 9.0 VGS = -10V td(on) Turn-On Delay Time ––– ––– 60 VDD = -50V tr Rise Time ––– ––– 100 I ns D1 = -4.0A td(off) Turn-Off Delay Time ––– ––– 50 RG = 7.5 tf Fall Time ––– ––– 70 VGS = -10V Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 Ls +LD Total Inductance ––– 7.0 ––– nH   in from package) with Source wire internally bonded from Source pin to Drain pin Ciss Input Capacitance ––– 380 ––– VGS = 0V Coss Output Capacitance ––– 170 ––– pF   VDS = -25V Crss Reverse Transfer Capacitance ––– 45 ––– ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– -4.0 A   ISM Pulsed Source Current (Body Diode)  ––– ––– -16 VSD Diode Forward Voltage ––– ––– -4.8 V TJ = 25°C,IS = -4.0A, VGS = 0V trr Reverse Recovery Time ––– ––– 200 ns TJ = 25°C, IF = -4.0A, VDD ≤ -50V Qrr Reverse Recovery Charge ––– ––– 3.1 µC di/dt = -100A/µs  ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
 
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 6.25 °C/W RJA Junction-to-Ambient (Typical Socket Mount) ––– ––– 175  
Footnotes:
 Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25°C, Peak IL = -4.0A, L = 45.5mH, VGS = -10V  ISD  -4.0A, di/dt  -110A/µs, VDD  -100V, TJ  150°C, Suggested RG = 7.5 Ω  Pulse width  300 µs; Duty Cycle  2% 2 International Rectifier HiRel Products, Inc. 2018-12-05
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