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Datasheet HMC8121 (Analog Devices) - 10

ПроизводительAnalog Devices
Описание81 GHz to 86 GHz, E-Band Variable Gain Amplifier
Страниц / Страница16 / 10 — HMC8121. Data Sheet. 350. 330. ) (% E A. POUT. P 16. GAIN. 310. PAE. IDD. …
ВерсияB
Формат / Размер файлаPDF / 352 Кб
Язык документаанглийский

HMC8121. Data Sheet. 350. 330. ) (% E A. POUT. P 16. GAIN. 310. PAE. IDD. (d –5. 290. I DD. ), m. –10. 270. DD = 265mA. IDD = 140mA. DD = 250mA. IDD = 130mA. –15

HMC8121 Data Sheet 350 330 ) (% E A POUT P 16 GAIN 310 PAE IDD (d –5 290 I DD ), m –10 270 DD = 265mA IDD = 140mA DD = 250mA IDD = 130mA –15

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Усилитель IC и модуль RF, ANALOG DEVICES HMC8121 RF Amplifier IC, 22dB Gain, 81GHz to 86GHz, 4V, Gel Pack-28
727GS
Весь мир
HMC8121-SX
Analog Devices
от 125 ₽
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Россия и страны СНГ
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HMC8121
Analog Devices
16 841 ₽
Элитан
Россия
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31 972 ₽
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HMC8121 Data Sheet 10 24 350 5 20 330 ) (% E A POUT 0 P 16 GAIN 310 ), PAE ) B B IDD ) (d A (d –5 IN IN 12 290 A (m G GA I DD ), m –10 B 8 270 (d I T DD = 265mA IDD = 140mA I OU DD = 250mA IDD = 130mA P –15 IDD = 225mA IDD = 120mA 4 250 IDD = 200mA IDD = 110mA IDD = 175mA IDD = 100mA IDD = 150mA IDD = 90mA –20 0 230 81.0 81.5 82.0 82.5 83.0 83.5 84.0 84.5 85.0 85.5 86.0
28 0
–15 –13 –11 –9 –7 –5 –3 –1 1 3
029 54-
FREQUENCY (GHz)
3154-
INPUT POWER (dBm)
1 131 Figure 29. Gain vs. Frequency at Various Drain Currents, Figure 32. POUT, Gain, PAE, and IDD vs. Input Power, PIN = −5 dBm/Tone, VCTL1/VCTL2 = −1 V, VCTL1/VCTL2 = −5 V, RF = 81 GHz Drain Current = (IDD1/IDD2 fixed at 50 mA) + (IDD3 to IDD6 Swept)
24 350 24 350 20 330 20 330 ) (%) (% E E A POUT A POUT P 16 GAIN 310 P 16 GAIN 310 ), B), PAE PAE I B DD ) IDD ) (d (d A IN 12 290 IN A (mA 12 290 (m G I DD GA ), I DD ), m Bm 8 270 B 8 270 (d (d T T OU OU P P 4 250 4 250 0 230 0 230 –15 –13 –11 –9 –7 –5 –3 –1 1 3
30 -032
–15 –13 –11 –9 –7 –5 –3 –1 1 3
0
INPUT POWER (dBm) INPUT POWER (dBm)
3154- 13154 1 Figure 30. POUT, Gain, PAE, and IDD vs. Input Power, Figure 33. POUT, Gain, PAE, and IDD vs. Input Power, VCTL1/VCTL2 = −5 V, RF = 83.5 GHz VCTL1/VCTL2 = −5 V, RF = 86 GHz
10 0.40 RF = 81GHz 100MHz TONE SPACING RF = 83.5GHz 300MHz TONE SPACING RF = 86GHz 0.35 500MHz TONE SPACING 750MHz TONE SPACING E (V) G 1 0.30 LTA ) VO (V 0.25 T DET PU 0.1 T U 0.20 – V O K REFV 0.15 -PEA O 0.01 -T 0.10 K PEA 0.05 0.001
1
0 –4 0 4 8 12 16 20
03
–20 –18 –16 –14 –12 –10 –8 –6 –4
134 54-
OUTPUT POWER (dBm)
154- 13
TOTAL INPUT POWER (dBm)
131 Figure 31. Detector Output Voltage (VREF – VDET) vs. Output Power at Figure 34. Envelope Detector Peak-to-Peak Output Voltage vs. Total Input Various RF Frequencies, VCTL1/VCTL2 = −5 V Power at Various Tone Spacings, RF = 81 GHz, VCTL1/VCTL2 = −5 V, VDET = 4 V with 150 Ω Load Impedance at ENVDET Rev. B | Page 10 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
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