Datasheet HMC8120 (Analog Devices) - 4

HMC8120 Data Sheet ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 2. Parameter Rating Table 3. Thermal Resistance
Drain Bias Voltage (V
1
DD1 to VDD6) 4.5 V
Package Type θJC Unit
Gate Bias Voltage (VGG1/VGG2, VGG3 to VGG6) −3 V to 0 V 28-Pad Bare Die [CHIP] 72.9 °C/W Gain Control Voltage (VCTL1 and VCTL2) −6 V to 0 V 1 Based on ABLEBOND® 84-1LMIT as die attach epoxy with thermal Maximum Junction Temperature (to Maintain 175°C conductivity of 3.6 W/mK. 1 Million Hours Mean Time to Failure (MTTF)) Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C
ESD CAUTION
Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. A | Page 4 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE