Datasheet BC546, BC846 (NXP) - 4

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NXP Semiconductors BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors 5. Limiting values Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 65 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; - 200 mA t ≤ p 1 ms IBM peak base current single pulse; - 200 mA t ≤ p 1 ms P ≤ tot total power dissipation Tamb 25 °C [1] SOT23 - 250 mW SOT323 - 200 mW SOT416 - 150 mW SOT54 - 500 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from in free air [1] junction to ambient SOT23 - - 500 K/W SOT323 - - 625 K/W SOT416 - - 833 K/W SOT54 - - 250 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 4 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents