Datasheet BC546, BC846 (NXP) - 5

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NXP Semiconductors BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors 7. Characteristics Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off VCB = 30 V; IE = 0 A - - 15 nA current VCB = 30 V; IE = 0 A; - - 5 μA Tj = 150 °C IEBO emitter-base cut-off VEB = 5 V; IE = 0 A - - 100 nA current hFE DC current gain hFE group A VCE = 5 V; IC = 10 μA - 180 - hFE group B VCE = 5 V; IC = 10 μA - 290 - DC current gain VCE = 5 V; IC = 2 mA 110 - 450 hFE group A VCE = 5 V; IC = 2 mA 110 180 220 hFE group B VCE = 5 V; IC = 2 mA 200 290 450 VCEsat collector-emitter IC = 10 mA; IB = 0.5 mA - 90 200 mV saturation voltage IC = 100 mA; IB = 5 mA [1] - 200 400 mV VBEsat base-emitter IC = 10 mA; IB = 0.5 mA [2] - 760 - mV saturation voltage IC = 100 mA; IB = 5 mA [2] - 900 - mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V [3] 580 660 700 mV IC = 10 mA; VCE = 5 V [3] - - 770 mV fT transition frequency VCE = 5 V; IC = 10 mA; 100 - - MHz f = 100 MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; - 2 3 pF f = 1 MHz Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A; - 11 - pF f = 1 MHz NF noise figure IC = 200 μA; VCE = 5 V; - 2 10 dB RS = 2 kΩ; f = 1 kHz; B = 200 Hz [1] Pulse test: t ≤ p 300 μs; δ ≤ 0.02. [2] VBEsat decreases by approximately 1.7 mV/K with increasing temperature. [3] VBE decreases by approximately 2 mV/K with increasing temperature. BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 5 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents