Datasheet BC846BS (NXP) - 2

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NXP Semiconductors BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol
1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 4 emitter TR2 TR1 5 base TR2 1 2 3 1 2 3 6 collector TR1 sym020
3. Ordering information Table 4. Ordering information Type number Package Name Description Version
BC846BS SC-88 plastic surface-mounted package; 6 leads SOT363
4. Marking Table 5. Marking codes Type number Marking code[1]
BC846BS *E5 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per transistor
VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 65 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; - 200 mA tp ≤ 1 ms IBM peak base current single pulse; - 200 mA tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW BC846BS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 August 2009 2 of 12
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents