Datasheet BC846BPN (NXP) - 9

NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor
006aaa544 − 006aaa542 1 −1.3 VBEsat (V) VBE −1.1 (V) −0.8 −0.9 (1) −0.7 (2) (3) −0.6 −0.5 −0.3 −0.4 −0.1 −10−1 −103 −102 −1 −10 −10−1 −103 −102 −1 −10 IC (mA) IC (mA) VCE = −5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C
Fig 13. TR2 (PNP): Base-emitter voltage as a function Fig 14. TR2 (PNP): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values
006aaa543 − 006aaa545 10 103 VCEsat (V) fT (MHz) −1 102 −10−1 (1) (2) (3) −10−2 10 −10−1 −103 −102 −1 −10 −1 −102 −10 IC (mA) IC (mA) IC/IB = 20 VCE = −5 V; Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 15. TR2 (PNP): Collector-emitter saturation Fig 16. TR2 (PNP): Transition frequency as a function voltage as a function of collector current; of collector current; typical values typical values
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 9 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents