Datasheet BC846DS (NXP) - 4

NXP Semiconductors BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor
006aab622 103 δ = 1 Zth(j-a) 0.75 (K/W) 0.50 0.33 102 0.20 0.10 0.05 0.02 10 0.01 0 1 10−5 10−3 10−2 10−4 10 102 10−1 103 1 tp (s) FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Per transistor
ICBO collector-base cut-off VCB = 50 V; IE = 0 A - - 15 nA current VCB = 30 V; IE = 0 A; - - 5 µA Tj = 150 °C IEBO emitter-base cut-off VEB = 6 V; IC = 0 A - - 100 nA current hFE DC current gain VCE = 5 V IC = 10 µA - 280 - IC = 2 mA 200 300 450 VCEsat collector-emitter IC = 10 mA; IB = 0.5 mA - 55 100 mV saturation voltage IC = 100 mA; IB = 5 mA - 200 300 mV VBEsat base-emitter IC = 10 mA; IB = 0.5 mA - 755 850 mV saturation voltage IC = 100 mA; IB = 5 mA - 1000 - mV VBE base-emitter voltage VCE = 5 V IC = 2 mA 580 650 700 mV IC = 10 mA - - 770 mV BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 4 of 12
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents