Datasheet BC846BDW1, BC847BDW1, BC848CDW1 (ON Semiconductor) - 6

BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC847BDW1
1.20 1000 V V CE = 5 V CE = 10 V 1.10 TA = 25°C AGE T 1.00 0.90 −55°C 0.80 0.70 100 (V) 25°C 0.60 PRODUCT 0.50 , BASE−EMITTER VOL 150°C 0.40 on) BE( 0.30 , CURRENT−GAIN − BANDWIDTH V f T 0.20 10 0.0001 0.001 0.01 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
Figure 18. VBE(on) at VCE = 5 V Figure 19. Current − Gain − Bandwidth Product
10 2 TA = 25°C T T- A = 25°C C 1.6 ib IC = IC = 10 mA 100 mA I I C = C = 1.2 20 mA 50 mA ANCE (pF) OR−EMITTER VOL ACIT Cob AGE (V) 0.8 C, CAP 0.4 , COLLECT CEV 1 0 0.1 1 10 100 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA)
Figure 20. Capacitances Figure 21. Collector Saturation Region
−0.2 VCE = 5 V −0.6 −1 °C) −1.4 qVB, for VBE TURE COEFFICIENT −55°C to 150°C (mV/ −1.8 −2.2 , TEMPERA −2.6 q VB −3 0.1 1 10 100 IB, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature Coefficient www.onsemi.com 6