Datasheet BC846ALT1G (ON Semiconductor) - 3

ПроизводительON Semiconductor
ОписаниеNPN Bipolar Transistor
Страниц / Страница13 / 3 — BC846ALT1G Series. BC846A, BC847A, BC848A, SBC846A. Figure 1. DC Current …
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BC846ALT1G Series. BC846A, BC847A, BC848A, SBC846A. Figure 1. DC Current Gain vs. Collector

BC846ALT1G Series BC846A, BC847A, BC848A, SBC846A Figure 1 DC Current Gain vs Collector

BC847CL на РадиоЛоцман.Цены
ПоставщикПроизводительНаименованиеЦена
T-electronON SemiconductorBC847CL/T1по запросу

Модельный ряд для этого даташита

Текстовая версия документа

BC846ALT1G Series BC846A, BC847A, BC848A, SBC846A
300 300 VCE = 1 V V 150°C CE = 5 V 150°C 200 200 25°C 25°C 100 −55°C 100 −55°C , DC CURRENT GAIN , DC CURRENT GAIN FE FE h h 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector Figure 2. DC Current Gain vs. Collector Current Current
0.18 IC/IB = 20 0.16 150°C 0.14 AGE (V) T 0.12 25°C OR−EMITTER 0.10 0.08 TION VOL 0.06 −55°C , COLLECT TURA 0.04 SA CE(sat)V 0.02 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage vs. Collector Current
1.0 1.2 −55°C 1.1 V 0.9 IC/IB = 20 CE = 5 V AGE (V) 1.0 T 0.8 25°C 0.9 −55°C AGE (V) T 0.7 0.8 25°C 0.6 150°C 0.7 0.6 , BASE−EMITTER TION VOL 0.5 150°C sat) 0.5 BE( TURA 0.4 V , BASE−EMITTER VOL 0.4 SA 0.3 on) 0.3 BE( 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs. Figure 5. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 3