Datasheet BC846ALT1G (ON Semiconductor) - 8
| Производитель | ON Semiconductor |
| Описание | NPN Bipolar Transistor |
| Страниц / Страница | 13 / 8 — BC846ALT1G Series. BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, … |
| Версия | 17 |
| Формат / Размер файла | PDF / 111 Кб |
| Язык документа | английский |
BC846ALT1G Series. BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B. Figure 24. Collector Saturation Region

72 предложений от 30 поставщиков TRANS NPN 30V 0.1A SOT23. Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236). Transistors - Bipolar (BJT)... |
| BC848BLT1BOXONS Rectron Semiconductor | по запросу | |
| BC848BLT1BOX Rectron Semiconductor | по запросу | |
| BC848BLT1-BOX Rectron Semiconductor | по запросу | |
| BC848BLT1-SMDTRANS Rectron Semiconductor | по запросу | |
Модельный ряд для этого даташита
Текстовая версия документа
BC846ALT1G Series BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
2.0 1.0 C) TA = 25°C ° -55°C to +125°C 1.2 TAGE (V) 1.6 (mV/ IC = 200 mA 1.6 1.2 I I I C = C = C = 50 mA IC = 100 mA COEFFICIENT 2.0 10 mA 20 mA OR-EMITTER VOL 0.8 TURE 2.4 0.4 , COLLECT 2.8 CE , TEMPERA V VBθ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 24. Collector Saturation Region Figure 25. Base−Emitter Temperature Coefficient
10 400 (MHz) 300 7.0 TA = 25°C 200 5.0 Cib V ANCE (pF) 100 CE = 10 V 3.0 T 80 A = 25°C ACIT Cob 60 2.0 C, CAP 40 30 1.0 20 T 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 f, CURRENT-GAIN - BANDWIDTH PRODUCT 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
Figure 26. Capacitances Figure 27. Current−Gain − Bandwidth Product www.onsemi.com 8