Datasheet BC846ALT1G (ON Semiconductor) - 9

BC846ALT1G Series BC847C, BC848C, BC849C, BC850C, SBC847C
1000 1000 900 VCE = 1 V 900 150°C V 150°C CE = 5 V 800 800 700 700 600 600 25°C 25°C 500 500 400 400 −55°C −55°C , DC CURRENT GAIN 300 , DC CURRENT GAIN 300 FE FE h 200 h 200 100 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 28. DC Current Gain vs. Collector Figure 29. DC Current Gain vs. Collector Current Current
0.30 IC/IB = 20 0.25 150°C AGE (V) 0.20 T OR−EMITTER 25°C 0.15 TION VOL 0.10 , COLLECT TURA −55°C SA 0.05 CE(sat)V 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A)
Figure 30. Collector Emitter Saturation Voltage vs. Collector Current
1.1 1.2 1.0 I 1.1 V C/IB = 20 CE = 5 V −55°C AGE (V) 1.0 0.9 T 25°C 0.9 −55°C AGE (V) 0.8 T 0.8 0.7 25°C 150°C 0.7 0.6 0.6 , BASE−EMITTER TION VOL 150°C 0.5 sat) 0.5 BE( TURA V 0.4 , BASE−EMITTER VOL 0.4 SA 0.3 on) 0.3 BE( 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 31. Base Emitter Saturation Voltage vs. Figure 32. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 9