Datasheet BC856, BC857, BC858, BC859, BC860 (Infineon) - 3
Производитель | Infineon |
Описание | PNP Silicon AF Transistors |
Страниц / Страница | 10 / 3 — BC856...BC860. Electrical Characteristics. Parameter. Symbol. Values. … |
Формат / Размер файла | PDF / 168 Кб |
Язык документа | английский |
BC856...BC860. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. DC Characteristics

71 предложений от 31 поставщиков Биполярный транзистор, PNP, 30 В, 100 мА, 300 мВт, SOT-23, Surface Mount |
| BC858C-7-F Diodes | от 10 ₽ | |
| BC858C/E9 Taiwan Semiconductor | по запросу | |
| BC858C (Diotec)
| по запросу | |
| BC858-C-RTK/P KEC | по запросу | |
Модельный ряд для этого даташита
Текстовая версия документа
BC856...BC860 Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CES V IC = 10 µA, VBE = 0 BC856 80 - - BC857/860 50 - - BC858/859 30 - - Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 1 µA, IC = 0 Collector cutoff current ICBO - - 15 nA VCB = 30 V, IE = 0 Collector cutoff current ICBO - - 5 µA VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) hFE - IC = 10 µA, VCE = 5 V hFE-group
A
- 140 - hFE-group
B
- 250 - hFE-group
C
- 480 - DC current gain 1) hFE IC = 2 mA, VCE = 5 V hFE-group
A
125 180 250 hFE-group
B
220 290 475 hFE-group
C
420 520 800 Collector-emitter saturation voltage1) VCEsat mV IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 Base-emitter saturation voltage 1) VBEsat IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - Base-emitter voltage 1) VBE(ON) IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 1) Pulse test: t ≤ 300µs, D = 2% 3 Jan-28-2005