Datasheet BC856W, BC857W, BC858W, BC859W, BC860W (Infineon) - 3

BC856W...BC860W Maximum Ratings Parameter Symbol
BC856W BC857W BC858W
Unit
BC860W BC859W Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 124 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) R ≤ thJS 105 K/W
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 BC856W 65 - - BC857/860W 45 - - BC858/859W 30 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 BC856W 80 - - BC857/860W 50 - - BC858/859W 30 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Jan-28-2005