Datasheet BC856W, BC857W, BC858W, BC859W, BC860W (Infineon) - 4
Производитель | Infineon |
Описание | PNP Silicon AF Transistors SOT-323 |
Страниц / Страница | 11 / 4 — BC856W...BC860W. Electrical Characteristics. Parameter. Symbol. Values. … |
Формат / Размер файла | PDF / 187 Кб |
Язык документа | английский |
BC856W...BC860W. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. DC Characteristics

38 предложений от 11 поставщиков PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| BC859AW
| от 3.30 ₽ | |
| BC859AW Diotec | от 4.40 ₽ | |
| BC859AW Diotec | от 4.46 ₽ | |
| BC859AW Diotec | 6.60 ₽ | |
Модельный ряд для этого даташита
Текстовая версия документа
BC856W...BC860W Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CES V IC = 10 µA, VBE = 0 BC856W 80 - - BC857/860W 50 - - BC858/859W 30 - - Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 1 µA, IC = 0 Collector cutoff current ICBO - - 15 nA VCB = 30 V, IE = 0 Collector cutoff current ICBO - - 5 µA VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) hFE - IC = 10 µA, VCE = 5 V hFE-group
A
- 140 - hFE-group
B
- 250 - hFE-group
C
- 480 - DC current gain 1) hFE IC = 2 mA, VCE = 5 V hFE-group
A
125 180 250 hFE-group
B
220 290 475 hFE-group
C
420 520 800 Collector-emitter saturation voltage1) VCEsat mV IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 Base-emitter saturation voltage 1) VBEsat IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - Base-emitter voltage 1) VBE(ON) IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 1) Pulse test: t ≤ 300µs, D = 2% 3 Jan-28-2005