Datasheet BC847ATT1, BC847BTT1, BC847CTT1 (ON Semiconductor) - 3

BC847ATT1, BC847BTT1, BC847CTT1
2.0 1.0 VCE = 10 V 0.9 T 1.5 A = 25°C GAIN TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 1.0 0.7 TS) 0.8 0.6 VBE(on) @ VCE = 10 V 0.5 0.6 TAGE (VOL 0.4 , VOL 0.4 V 0.3 , NORMALIZED DC CURRENT 0.2 0.3 FE VCE(sat) @ IC/IB = 10 h 0.1 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages
2.0 1.0 C) TA = 25°C ° -55°C to +125°C 1.2 TAGE (V) 1.6 (mV/ IC = 200 mA 1.6 1.2 I I I C = C = C = 50 mA IC = 100 mA COEFFICIENT 2.0 10 mA 20 mA OR-EMITTER VOL 0.8 TURE 2.4 0.4 , COLLECT 2.8 CE , TEMPERA V VBθ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient http://onsemi.com 3