Datasheet BC856ALT1G (ON Semiconductor)

link to page 1 link to page 1 link to page 6 link to page 6 BC856ALT1G Series General Purpose Transistors
PNP Silicon Features
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S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) 2
Rating Symbol Value Unit
EMITTER Collector-Emitter Voltage VCEO V BC856, SBC856 −65 BC857, SBC857 −45 BC858, NSVBC858, BC859 −30 3 Collector-Base Voltage VCBO V BC856, SBC856 −80 1 BC857, SBC857 −50 2 BC858, NSVBC858, BC859 −30
SOT−23 (TO−236)
Emitter−Base Voltage VEBO −5.0 V
CASE 318 STYLE 6
Collector Current − Continuous IC −100 mAdc Collector Current − Peak IC −200 mAdc
THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board, PD xx M G (Note 1) TA = 25°C 225 mW G Derate above 25°C 1.8 mW/°C 1 Thermal Resistance, RqJA 556 °C/W Junction−to−Ambient xx = Device Code Total Device Dissipation Alumina PD xx = (Refer to page 6) Substrate, (Note 2) TA = 25°C 300 mW M = Date Code* Derate above 25°C 2.4 mW/°C G = Pb−Free Package Thermal Resistance, Rq (Note: Microdot may be in either location) JA 417 °C/W Junction−to−Ambient *Date Code orientation and/or overbar may vary depending upon manufacturing location. Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 1994
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Publication Order Number:
October, 2016 − Rev. 15 BC856ALT1/D