Datasheet BC856ALT1G (ON Semiconductor) - 2
Производитель | ON Semiconductor |
Описание | PNP Bipolar Transistor |
Страниц / Страница | 7 / 2 — BC856ALT1G Series. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. … |
Версия | 15 |
Формат / Размер файла | PDF / 152 Кб |
Язык документа | английский |
BC856ALT1G Series. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS

34 предложений от 15 поставщиков Биполярные Одиночные Массивы Транзисторов - BJT |
| SBC856BLT1G ON Semiconductor | 1.17 ₽ | |
| SBC856BLT1G ON Semiconductor | 7.43 ₽ | |
| SBC856BLT1G ON Semiconductor | 29 ₽ | |
| SBC856BLT1G ON Semiconductor | по запросу | |
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BC856ALT1G Series ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage BC856, SBC856 Series V(BR)CEO −65 − − V (IC = −10 mA) BC857, SBC857 Series −45 − − BC858, NSBVC858 BC859 Series −30 − − Collector − Emitter Breakdown Voltage BC856 S, SBC856eries V(BR)CES −80 − − V (IC = −10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only −50 − − BC858, NSVB858, BC859 Series −30 − − Collector − Base Breakdown Voltage BC856, SBC856 Series V(BR)CBO −80 − − V (IC = −10 mA) BC857, SBC857 Series −50 − − BC858, NSVBC858, BC859 Series −30 − − Emitter − Base Breakdown Voltage BC856, SBC856 Series V(BR)EBO −5.0 − − V (IE = −1.0 mA) BC857, SBC857 Series −5.0 − − BC858, NSVBC858, BC859 Series −5.0 − − Collector Cutoff Current (VCB = −30 V) ICBO − − −15 nA Collector Cutoff Current (VCB = −30 V, TA = 150°C) − − −4.0 mA
ON CHARACTERISTICS
DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A hFE − 90 − − (IC = −10 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B, − 150 − BC858B, NSVBC858B BC857C, SBC857C BC858C − 270 − (IC = −2.0 mA, VCE = −5.0 V) BC856A, SBC856A, BC857A, 125 180 250 SBC857A, BC858A BC856B, SBC856B, BC857B, SBC857B, BC858B, 220 290 475 NSVBC858B, BC859B BC857C, SBC857C, BC858C, BC859C 420 520 800 Collector − Emitter Saturation Voltage VCE(sat) V (IC = −10 mA, IB = −0.5 mA) − − −0.3 (IC = −100 mA, IB = −5.0 mA) − − −0.65 Base − Emitter Saturation Voltage VBE(sat) V (IC = −10 mA, IB = −0.5 mA) − −0.7 − (IC = −100 mA, IB = −5.0 mA) − −0.9 − Base − Emitter On Voltage VBE(on) V (IC = −2.0 mA, VCE = −5.0 V) −0.6 − −0.75 (IC = −10 mA, VCE = −5.0 V) − − −0.82
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT 100 − − MHz (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance Cob − − 4.5 pF (VCB = −10 V, f = 1.0 MHz) Noise Figure NF dB (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series − − 10 BC859 Series − − 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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