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Datasheet BC856ALT1G (ON Semiconductor) - 5

ПроизводительON Semiconductor
ОписаниеPNP Bipolar Transistor
Страниц / Страница7 / 5 — BC856ALT1G Series. Figure 13. Thermal Response. Figure 14. Active Region …
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Формат / Размер файлаPDF / 152 Кб
Язык документаанглийский

BC856ALT1G Series. Figure 13. Thermal Response. Figure 14. Active Region Safe Operating Area. www.onsemi.com

BC856ALT1G Series Figure 13 Thermal Response Figure 14 Active Region Safe Operating Area www.onsemi.com

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BC856ALT1G Series
1.0 0.7 D = 0.5 0.5 0.2 0.3 0.2 THERMAL 0.05 SINGLE PULSE 0.1 ZqJC(t) = r(t) RqJC 0.1 R P qJC = 83.3°C/W MAX (pk) 0.07 SINGLE PULSE ZqJA(t) = r(t) RqJA ANCE (NORMALIZED) 0.05 t R 1 qJA = 200°C/W MAX D CURVES APPLY FOR POWER r(t), TRANSIENT t RESIST 0.03 2 PULSE TRAIN SHOWN 0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms)
Figure 13. Thermal Response
-200 The safe operating area curves indicate IC−VCE limits of 1 s 3 ms the transistor that must be observed for reliable operation. -100 Collector load lines for specific circuits must fall below the (mA) T T limits indicated by the applicable curve. A = 25°C J = 25°C -50 The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are OR CURRENT BC558, BC559 valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) BC557 may be calculated from the data in Figure 13. At high case or -10 BC556 ambient temperatures, thermal limitations will reduce the , COLLECT -5.0 power that can be handled to values less than the limitations I C BONDING WIRE LIMIT THERMAL LIMIT imposed by the secondary breakdown. SECOND BREAKDOWN LIMIT -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area www.onsemi.com 5
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