Datasheet BC847BPN (Nexperia) - 5

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Nexperia BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 7. Characteristics Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity
ICBO collector-base cut-off VCB = 30 V; IE = 0 A - - 15 nA current VCB = 30 V; IE = 0 A; - - 5 µA Tj = 150 °C IEBO emitter-base cut-off VEB = 5 V; IC = 0 A - - 100 nA current hFE DC current gain VCE = 5 V; IC = 2 mA 200 - 450 VCEsat collector-emitter IC = 10 mA; IB = 0.5 mA - - 100 mV saturation voltage IC = 100 mA; IB = 5 mA [1] - - 300 mV VBEsat base-emitter IC = 10 mA; IB = 0.5 mA - 755 - mV saturation voltage VBE base-emitter voltage IC = 2 mA; VCE = 5 V TR1 (NPN) 580 655 700 mV TR2 (PNP) 600 655 750 mV Cc collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz TR1 (NPN) - - 1.5 pF TR2 (PNP) - - 2.2 pF Ce emitter capacitance IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz TR1 (NPN) - 11 - pF TR2 (PNP) - 10 - pF fT transition frequency IC = 10 mA; VCE = 5 V; 100 - - MHz f = 100 MHz [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. BC847BPN_4 © NNexperia B.V. 2017. All rights reserved
Product data sheet Rev. 04 — 18 February 2009 5 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents