Datasheet AL8860Q (Diodes) - 3

AL8860Q Q Absolute Maximum Ratings
(Note 5)
Symbol Parameter Rating Unit
VIN Input Voltage -0.3 to 42 V VSW, VSET SW, SET Pin Voltage -0.3 to 42 V VCTRL CTRL Pin Voltage -0.3 to 6 V TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -65 to +150 °C T
T
LEAD Lead Temperature (Soldering, 10s) +260 °C
C
Note: 5. Stresses greater than those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied.
U
Exposure to Absolute Maximum Ratings for extended periods can affect device reliability.
D O R ESD Ratings
(Note 6)
P W Symbol Parameter Rating Unit E
Human Body Model (HBM), Per AEC-Q100-002 ±3000
N
VESD V Charged Device Model (CDM), Per AEC-Q100-011 ±1000 Note: 6. AEC-Q100-002 indicates that HBM stressing shall be accordance with the ANSI/ESDA/JEDEC JS-001 specification.
Recommended Operating Conditions Symbol Parameter Min Max Unit
VIN Input Voltage 4.5 40 V fSW Switching Frequency — 1 MHz IOUT Continuous Output Current — 1.5 A Voltage Range for 10% to 100% DC Dimming VCTRL 0.4 2.5 V Relative to GND Pin Voltage High for PWM Dimming with Respect to VCTRL_HIGH 2.6 5.5 V GND Pin Voltage Low for PWM Dimming Relative to GND VCTRL_LOW 0 0.3 V Pin TA Operating Ambient Temperature -40 +125 °C
Thermal Information
(Note 7)
Symbol Parameter Rating Unit
θJA Junction-to-Ambient Thermal Resistance 56 °C/W θJC Junction-to-Case (Top) Thermal Resistance 15 °C/W Note: 7. Device mounted on 2"*2" FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. AL8860Q 3 of 15 May 2019 Document number: DS41797 Rev. 2 - 2
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