Datasheet MPSA06, MMBTA06, PZTA06 (ON Semiconductor) - 4

β V CESAT -COLLECTOR EMITTE R VOLTAGE (V) h FE-TYP ICAL PULSED CURRE NT GAIN 200
VCE = 1V
125 °C 150 25 °C 100 -40 °C 50 0.001
IC 0.01
0.1
-COLLECTOR CURRENT (A) -40 °C 0.8
25 °C
125 °C 0.6 0.4
1
10
100
I C -COLLECTOR CURRE NT (mA) 0.4
0.3 1000 -40 °C 0
0.1 1
10
100
I C -COLLECTOR CURRE NT (mA) 1000 1
-40 °C 0.8
25 °C 0.6 125 °C 0.4
VCE = 5V 0.2
0 1 10
100
I C -COLLECTOR CURRE NT (mA) 1000 Figure 4. Base-Emitter On Voltage vs.
Collector Current 2.0 10 VCE(SAT), Collector Emitter Voltage (V) I CBO -COLLE CTOR CURRENT (nA) 25 °C 0.1 Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current VCB = 80 V
1 0.1 0.01 0.001
25 125 °C 0.2 V BEON -BAS E EMITTER ON VOLTAGE (V) V BESAT -BASE EMITTE R VOLTAGE (V) β = 10 0.1 β = 10 Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current Figure 1. Typical Pulsed Current Gain vs.
Collector Current 1 0.5 50
75
100
T A -AMBIE NT TEMP ERATURE (° C) 125 IC=10mA 1.6 IC=50mA 1.4 IC=100mA 1.2 IC=250mA 1.0 IC=500mA 0.8
0.6
0.4
0.2
0.0
0.01 0.1 1 10 IB -Base Current (mA) Figure 5. Collector Cut-Off Current vs.
Ambient Temperature © 1997 Fairchild Semiconductor Corporation
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 1.8 Figure 6. Collector Saturation Region www.fairchildsemi.com
3 MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier Typical Performance Characteristics