Datasheet MPSA06, MMBTA06, PZTA06 (ON Semiconductor) - 5

f = 1.0 MHz
CAPACITANCE (pF) BV CER -BREAKDOWN VOLTAGE (V) 100 117
116
115
114
113 C ib
10 Cob
1 112
111
0.1 1 10 100 0.1
0.1 1000 RESISTANCE (k Ω) 400 100 1 V CE = 5V P D -POWER DISSIPATION (W) f T -GAIN BANDWIDTH PRODUCT (MHz) 10 Figure 8. Input and Output Capacitance vs.
Reverse Current Figure 7. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base 350 300 250 200 150 10 20 50 100 I C -COLLECTOR CURRENT (mA) Figure 9. Gain Bandwidth Product vs.
Collector Current © 1997 Fairchild Semiconductor Corporation
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 SOT-223 0.75 TO-92 0.5
SOT-23 0.25 0 100
1 1 V CE -COLLECTOR VOLTAGE (V) 0 25 50
75
100
TEMPERATURE ( o C) 125 150 Figure 10. Power Dissipation vs.
Ambient Temperature www.fairchildsemi.com
4 MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier Typical Performance Characteristics (Continued)