Datasheet 2N7000 (NTE Electronics) - 2

Electrical Characteristics (Cont’d):
(TA = +25C unless otherwise specified)
ON Characteristics
(Note 1) Gate Threshold Voltage VGS(th) ID = 1mA, VDS = VGS 0.8 2.1 3.0 V Static Drain−Source ON Resistance rDS(on) VGS = 10V, − 1.2 5.0 ID = 500mA TJ = +125C − 1.9 9.0 VGS = 4.5V, ID = 75mA − 1.8 5.3 Drain−Source ON−Voltage VDS(on) VGS = 10V, ID = 500mA − 0.6 2.5 V VGS = 4.5V, ID = 75mA − 0.14 0.4 V ON−State Drain Current ID(on) VGS = 4.5V, VDS = 10V 75 600 − mA Forward Transconductance gFS VDS = 10V, ID = 200mA 100 320 − mS
Dynamic Characteristics
Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1MHz − 20 50 pF Reverse Transfer Capacitance Coss − 11 25 pF Output Capacitance Crss − 4 5 pF Turn−On Time ton VDD = 15V, RL = 25, − − 10 ns ID = 500mA, VGS = 10V, Turn−Off Time toff R − − 10 ns GEN = 25 Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) (12.7) Dia Max Min S G D .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max