Datasheet NTE491, NTE491SM (NTE Electronics)

NTE491 NTE491SM MOSFET N−Ch, Enhancement Mode High Speed Switch Features:
D Available in either TO92 (NTE491) or SOT−23 Surface Mount (NTE491SM) Type Package D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current capability
Absolute Maximum Ratings:
Drain−Source Voltage, VDS . 60V Drain−Gate Voltage (RGS = 1MΩ), VDGR . 60V Gate−Source Voltage, VGS Continuous . ±20V Non−Repetitive (tp ≤ 50µs) . ±40V Drain Current, ID Continuous NTE491 . 200mA NTE491SM . 115mA Pulsed NTE491 . 500mA NTE491SM . 800mA Total Device Dissipation (TA = +25°C), PD NTE491 . 350mW NTE491SM . 200mW Derate above 25°C NTE491 . 2.8mW/°C NTE491SM . 1.6mW/°C Operating Junction Temperature Range, TJ . −55° to +150°C Storage Temperature Range, Tstg . −55° to +150°C Thermal Resistance, Junction−to−Ambient, Rth (JA) NTE491 . 312.5°C/W NTE491SM . 625°C/W Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . +300°C