Datasheet 2N3019 (STMicroelectronics) - 2

2N3019 THERMAL DATA
R o thj-case Thermal Resistance Junction-Case Max 30 C/W R o thj-amb Thermal Resistance Junction-Ambient Max 187.5 C/W
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off VCB = 90 V 10 nA Current (IE = 0) VCB = 90 V TC = 150 oC 10 µA IEBO Emitter Cut-off Current VEB = 5 V 10 nA (IC = 0) V(BR)CBO Collector-Base IC = 100 µA 140 V Breakdown Voltage (IE = 0) V(BR)CEO∗ Collector-Emitter IC = 10 mA 80 V Breakdown Voltage (IB = 0) V(BR)EBO Emitter-Base IE = 100 µA 7 V Breakdown Voltage (IC = 0) VCE(sat)∗ Collector-Emitter IC = 150 mA IB = 15 mA 0.2 V Saturation Voltage IC = 500 mA IB = 50 mA 0.5 V VBE(sat)∗ Base-Emitter IC = 150 mA IB = 15 mA 1.1 V Saturation Voltage hFE∗ DC Current Gain IC = 0.1 mA VCE = 10 V 50 IC = 10 mA VCE = 10 V 90 IC = 150 mA VCE = 10 V 100 300 IC = 500 mA VCE = 10 V 50 IC = 1A VCE = 10 V 15 IC = 150 mA VCE = 10 V Tamb = -55 oC 40 hfe∗ Small Signal Current IC = 1 mA VCE = 5 V f = 1KHz 80 400 Gain fT Transition Frequency IC = 50 mA VCE = 10 V f = 20MHz 100 MHz CCBO Collector-Base IE = 0 VCB = 10 V f = 1MHz 12 pF Capacitance CEBO Emitter-Base IC = 0 VEB = 0.5 V f = 1MHz 60 pF Capacitance NF Noise Figure IC = 0.1 mA VCE = 10 V 4 dB f = 1KHz Rg = 1KΩ rbb’ Cb’c Feedback Time IC = 10 mA VCE = 10 V f = 4MHz 400 ps Constant ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/4