SEP8706 AlGaAs Infrared Emitting DiodeFEATURES • Side-looking plastic package • 50¡ (nominal) beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger INFRA-20.TIF DESCRIPTIONOUTLINE DIMENSIONS in inches (mm) The SEP8706 is an aluminum gallium arsenide infrared Tolerance 3 plc decimals ±0.005(0.12) emitting diode molded in a side-emitting smoke gray 2 plc decimals ±0.020(0.51) plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. DIM_071.ds4 Honeywell reserves the right to make changes in order to improve design and 52 h supply the best products possible.
