Datasheet Si2312CDS (Vishay) - 4

Si2312CDS
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 100 0.06 ID = 5 A ) (Ω 0.05 (A) TJ = 150 °C 10 tance is s Current e 0.04 -R TJ = 125 °C ource S T - On J = 25 °C - 1 I S (on) S D 0.03 R TJ = 25 °C 0.1 0.02 0.0 0.3 0.6 0.9 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.9 32 0.7 24 ID = 250 μA (V) (th 0.5 16 GS V Power (W) 0.3 8 0.1 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power (Junction-to-Ambient)
100 Limited by RDS(on)* 10 (A) 100 μs 1 ms Current 1 rain 10 ms D - TA = 25 °C I D Single Pulse 100 ms 0.1 1 s, 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S10-0641-Rev. A, 22-Mar-10
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