TSSP930.. www.vishay.com Vishay Semiconductors Axis Title Axis Title 1.0 10000 1.0 10000 )2 0.9 0.9 ity /m tiv W 0.8 0.8 nsi (m e 0.7 0.7 S 1000 1000 ance 0.6 0.6 ectral ne ne ine ne ine ne p rradi 0.5 0.5 d I e S 1st li 2nd li 2nd l 1st li 2nd l v 2nd li 0.4 0.4 100 100 elati 0.3 hreshol 0.3 R T - - l. 0.2 0.2 λ) re 0.1 e min. S( 0.1 E 0 10 0 10 750 850 950 1050 1150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 λ - Wavelength (nm) V - Supply Voltage (V) S Fig. 7 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Sensitivity vs. Supply Voltage Axis Tit 0° le 10° 20° 30° 1.0 40° 0.9 ne ne ine ine 50° 2nd l 2nd l 2nd li 2nd li 0.8 60° 0.7 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 d - Relative Transmission Distance rel. Fig. 8 - Directivity The typical application of these devices is a reflective or Example for a sensor hardware: beam break sensor with active low “detect” or “no detect” information contained in its output. The TSSP930.. is also suitable for fast (~ 15 ms) proximity sensor applications for IR detector ranges between 10 cm and 2 m, if a burst pattern with variable intensity is used. IR emitter Separation to avoid crosstalk by stray light inside the housing There should be no common window in front of the emitter and detector in order to avoid crosstalk via guided light through the window. Rev. 1.2, 31-Jul-2019 4 Document Number: 82866 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
