link to page 6 IGT40R070D1 E8220 400V CoolGaN™ enhancement-mode Power Transistor Table 7 Gate charge characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. I Gate charge Q GS = 0 to 10 mA; VDS= 320 V; G - 4.5 - nC ID= 8 A Table 8 Reverse conduction characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Source-Drain reverse voltage VSD - 2.0 2.5 V VGS= 0 V; ISD= 8 A - - Pulsed current, reverse IS,pulse 60 A I - - G = 26.1 mA Reverse recovery charge Q 1 rr - 0 - nC IS = 8 A, VDS = 320 V Reverse recovery time trr - 0 - ns Peak reverse recovery current Irrm - 0 - A 1 Excluding Qoss Final Data Sheet 6 Rev. 2.0 2018-04-25
