Datasheet BCV61 (Infineon) - 3
Производитель | Infineon |
Описание | NPN Silicon Double Transistor |
Страниц / Страница | 7 / 3 — BCV61. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. … |
Версия | 01_01 |
Формат / Размер файла | PDF / 544 Кб |
Язык документа | английский |
BCV61. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. Characteristics. AC characteristics for transistor T1

77 предложений от 34 поставщиков Биполярный транзистор, NPN, 30 В, 100 мА, 250 мВт, SOT-143B, Surface Mount |
| BCV61C,215 Nexperia | от 1.22 ₽ | |
| BCV61C,215 Nexperia | 8.15 ₽ | |
| BCV61,215 Nexperia | от 12 ₽ | |
| BCV61A,215 Nexperia | от 20 ₽ | |
Модельный ряд для этого даташита
Текстовая версия документа
BCV61 Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. Characteristics
Base-emitter forward voltage VBES V IE = 10 µA 0.4 - - IE = 250 mA - - 1.8 Matching of transistor T1 and transistor T2 IC1 / IC2 - at IE2 = 0.5mA and VCE1 = 5V - - - TA = 25 °C 0.7 - 1.3 TA = 150 °C 0.7 - 1.3 Thermal coupling of transistor T1 and IE2 - 5 - mA transistor T2 1) T1: VCE = 5V Maximum current of thermal stability of IC1
AC characteristics for transistor T1
Transition frequency fT - 250 - MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 0.95 - pF VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb - 9 - VEB = 0.5 V, f = 1 MHz Noise figure F - 2 - dB IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, ∆ f = 200 Hz Short-circuit input impedance h11e - 4.5 - kΩ IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio h12e - 2 - 10-4 IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio h21e 100 - 900 - IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance h22e - 30 - µS IC = 1 mA, VCE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm 3 2011-10-13