Datasheet OPB822, OPB826 (TT Electronics) - 4

VF Forward Voltage - - 1.7 V IF = 20 mA IR Reverse Current - - 100 µA VR = 2 V V(BR)(CEO) Collector-Emitter Breakdown Voltage 30 - - V IC = 1 mA V(BR)(ECO) Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA ICEO Collector-Emitter Leakage Current - - 100 nA VCE = 10 V, IF = 0, EE = 0 On-State Collector Current OPB822S 250 - - µA VCE = 5 V, IF = 20 mA IC(ON) OPB822SD 100 - - µA VCE = 5 V, IF = 20 mA OPB826S 250 - - µA VCE = 10 V, IF = 20 mA OPB826SD 100 - - µA VCE = 10 V, IF = 20 mA Collector-Emitter Saturation Voltage OPB822S - - 0.4 V IC = 125 µA, IF = 20 mA VCE(SAT) OPB822SD - - 0.4 V IC = 50 µA, IF = 20 mA OPB826S - - 0.4 V IC = 125 µA, IF = 20 mA OPB826SD - - 0.4 V IC = 50 µA, IF = 20 mA Crosstalk OPB822D, OPB822SD - - 250 ICX1 µA I OPB826S - - 20 F1 = 0 mA, IF2 = 20 mA, VCE = 10 V OPB826SD - - 10 Notes: (1) All parameters tested using pulse techniques.