Datasheet DF2B6M4ASL (Toshiba) - 2
| Производитель | Toshiba |
| Описание | ESD Protection Diodes Silicon Epitaxial Planar |
| Страниц / Страница | 9 / 2 — DF2B6M4ASL. 5. Example. of. Circuit. Diagram. 6. Quick. Reference. Data. … |
| Формат / Размер файла | PDF / 364 Кб |
| Язык документа | английский |
DF2B6M4ASL. 5. Example. of. Circuit. Diagram. 6. Quick. Reference. Data. Characteristics. Symbol. Note. Test. Condition. Min. Typ. Max. Unit. Working. peak
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DF2B6M4ASL 5. Example of Circuit Diagram 6. Quick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage VRWM (Note 1) 5.5 V Total capacitance Ct VR = 0 V, f = 1 MHz 0.15 0.2 pF Dynamic resistance RDYN (Note 2) 0.7 Ω Electrostatic discharge voltage VESD (Note 3) 15 kV (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A. Note 3: Criterion: No damage to devices. ©2019 2 2019-08-05 Toshiba Electronic Devices & Storage Corporation Rev.1.0
