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Datasheet STW88N65M5-4 (STMicroelectronics) - 2

ПроизводительSTMicroelectronics
ОписаниеN-channel 650 V, 0.024 Ω typ., 84 A, MDmesh M5 Power MOSFET in a TO247-4 package
Страниц / Страница13 / 2 — Contents. STW88N65M5-4. Electrical ratings . 3. Electrical …
Формат / Размер файлаPDF / 723 Кб
Язык документаанглийский

Contents. STW88N65M5-4. Electrical ratings . 3. Electrical characteristics . 4. Test circuits . 9. Package information . 10

Contents STW88N65M5-4 Electrical ratings  3 Electrical characteristics  4 Test circuits  9 Package information  10

26 предложений от 13 поставщиков
Транзистор: N-MOSFET; полевой; 650В; 50,5А; Idm: 336А; 450Вт
AllElco Electronics
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STMicroelectronics
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STMicroelectronics
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STMicroelectronics
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STMicroelectronics
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link to page 3 link to page 4 link to page 6 link to page 9 link to page 10 link to page 10 link to page 12
Contents STW88N65M5-4 Contents 1 Electrical ratings . 3 2 Electrical characteristics . 4
2.1 Electrical characteristics (curves) . 6
3 Test circuits . 9 4 Package information . 10
4.1 TO247-4 package information . 10
5 Revision history . 12
2/13 Doc ID 027754 Rev 1 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history
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