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Datasheet STW88N65M5-4 (STMicroelectronics) - 10

ПроизводительSTMicroelectronics
ОписаниеN-channel 650 V, 0.024 Ω typ., 84 A, MDmesh M5 Power MOSFET in a TO247-4 package
Страниц / Страница13 / 10 — Package information. STW88N65M5-4. 4 Package. information. 4.1. TO247-4 …
Формат / Размер файлаPDF / 723 Кб
Язык документаанглийский

Package information. STW88N65M5-4. 4 Package. information. 4.1. TO247-4 package information. Figure 21. TO247-4 package outline

Package information STW88N65M5-4 4 Package information 4.1 TO247-4 package information Figure 21 TO247-4 package outline

23 предложений от 11 поставщиков
Транзистор: N-MOSFET; полевой; 650В; 50,5А; Idm: 336А; 450Вт
AllElco Electronics
Весь мир
STW88N65M5-4
STMicroelectronics
от 290 ₽
ChipWorker
Весь мир
STW88N65M5-4
STMicroelectronics
984 ₽
Эиком
Россия
STW88N65M5-4
STMicroelectronics
от 1 850 ₽
Элитан
Россия
STW88N65M5-4
STMicroelectronics
2 002 ₽
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Package information STW88N65M5-4 4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO247-4 package information Figure 21. TO247-4 package outline
B$ 10/13 Doc ID 027754 Rev 1 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history
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