Datasheet GAN063-650WSA (Nexperia) - 6

Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET
aaa-028060 200 aaa-028061 100 ID ID (A) A VGS = 1 0 1 0 V (A ( ) A VGS = 1 0 1 0 V 80 150 7. 7 5 . 5 V 8 8 V 60 7 7 V 100 7 7 V 40 6 6 V 50 6 6 V 20 5 5 V 5 5 V 0 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS (V) VDS (V) Tj = 25 °C Tj = 175 °C
Fig. 5. Output characteristics; drain current as a Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values function of drain-source voltage; typical values
aaa-028055 80 aaa-029173 160 ID QOSS S (A) A (n ( C n ) 60 120 40 80 20 40 17 1 5 7 °C ° Tj = 2 5 2 ° 5 C ° 0 0 0 2 4 6 8 10 0 100 200 300 400 500 600 700 VGS (V) VDS (V) VDS = 10 V
Fig. 8. Typical QOSS Fig. 7. Transfer characteristics; drain current as a function of gate-source voltage; typical values
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Product data sheet 27 November 2019 6 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents