Datasheet GAN063-650WSA (Nexperia) - 10
| Производитель | Nexperia |
| Описание | 650 V, 50 mΩ Gallium Nitride (GaN) FET |
| Страниц / Страница | 12 / 10 — Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 12. … |
| Версия | 27112019 |
| Формат / Размер файла | PDF / 289 Кб |
| Язык документа | английский |
Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 12. Package outline
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Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 12. Package outline Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429
E A E1 E A 2/2 2 D2 Q S E2 ØP D D 1 ØP1 1 2 3 L1 A1 b2 (2x) b L 4 e b c (2x) (3x) 0 20 mm scale øP øP1 Q S 3.658 7.315 5.740 6.299 3.556 7.061 5.486 6.045 Dimensions (mm are the original dimensions) Unit A A1 A2 b b2 b4 c D D1 D2 E E1 E2 E2/2 e L L1 max 5.156 2.507 2.108 1.397 2.387 3.429 0.889 21.082 17.441 1.321 16.027 14.148 5.225 2.613 20.320 4.445 mm nom 5.436 min 4.902 2.253 1.854 0.991 1.651 2.591 0.381 20.828 17.187 1.067 15.773 13.894 4.318 2.159 20.066 3.937 sot429_po Outline References European version projection Issue date IEC JEDEC JEITA SOT429 19-08-19 TO-247 19-08-20
Fig. 17. Package outline TO-247 (SOT429)
GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 10 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents
