SiSF20DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1000 10000 Limited by R a I limited S1S2(on) S1S2M 100 ) I limited S1S2(ON) (A 1000 10 100 μs rrent ne ne u 1 ms ine 1st li 2nd li 1 2nd l 10 ms ource C 100 S 100 ms - T = 25 °C, A 1 s S2 0.1 single pulse I S1 10 s DC BV limited S1S2 0.01 10 0.1 1 10 100 V - Source-to-Source Voltage (V) S1S2 Safe Operating Area, Junction-to-Ambient Axis Title Axis Title 60 10000 100 10000 50 80 ) (A 40 1000 1000 ) 60 (W rrent ne ne u ne ne ine 30 er ine 1st li ow 2nd li 1st li P 2nd li 2nd l 40 2nd l - ource C 20 100 P 100 S - S2 20 S1 10 R 0 10 0 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Case Temperature (°C) C C Current Derating bPower, Junction-to-CaseNotes a. VGS > minimum VGS at which RDS(on) is specified b. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-1210-Rev. A, 10-Dec-2018 5 Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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