Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –16 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA –1.5 V On Characteristics –20 ID = –250 µA, Referenced to 25°C V –13 mV/°C (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = –4.5 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –10 A 57 S V DS = –10 V, f = 1.0 MHz V GS = 0 V, 4951 pF 884 pF 451 pF –0.4 –0.6 3 V GS = –4.5 V, ID = –10 A V GS = –2.5 V, ID = –9 A V GS = –4.5 V, ID =–10A, TJ =125°C 8.5 11 11 mV/°C 13 17 20 mΩ –50 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = –10V, V GS = –4.5 V, 16 29 ns 9 18 ns Turn–Off Delay Time 196 314 ns tf Turn–Off Fall Time 78 125 ns Qg Total Gate Charge 53 74 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –10 V, V GS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –10 A, 6 nC 12 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –2.1 A Voltage (Note 2) –0.6 –2.1 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1in2 pad of 2 oz copper b) 105 °C/W when mounted on a .04 in2 pad of 2 oz copper c) 125 °C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6575 Rev F(W) FDS6575 Electrical Characteristics
