Datasheet FDS6575 (ON Semiconductor) - 5

FDS6575 Typical Characteristics 6000
ID = -10A VDS = -5V 5000 4
-15V
3 2 4000 3000 2000 C OSS 1
1000
CRSS 0 0
0 10 20 30 40 50 60 0 5 Q g, GATE CHARGE (nC) 20 50
P(pk), PEAK TRANSIENT POWER (W) 100µ
1ms
10ms RDS(ON) LIMIT 100ms
1s
10s
DC 1
V GS = -4.5V
SINGLE PULSE
RθJA = 125o C/W 0.1 TA = 25 oC
0.01
0.01 0.1 1 10 SINGLE PULSE
Rθ JA = 125°C/W
T A = 25°C 40 30 20 10 0
0.001 100 0.01 0.1 1 10 100 t1 , TIME (sec) -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 10 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz
VGS = 0 V CISS -10V
CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum
Power Dissipation. 1
D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 o RθJA = 125 C/W 0.1
0.05 P(pk) 0.02
0.01 t1 0.01 t2
TJ -TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2 SINGLE PULSE 0.001
0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design. FDS6575 Rev F(W)