Datasheet IRLHM620PbF (Infineon)

IRLHM620PbF HEXFET® Power MOSFET
VDSS 20 V
   
VGS
±
12 V RDS(on) max
(@ VGS = 4.5V)
2.5 m
 (@ VGS = 2.5V)
3.5 Qg (typical) 52 nC ID
PQFN 3.3 x 3.3 mm
(@TC (Bottom) = 25°C) 40

A Applications
 Battery Operated DC Motor Inverter MOSFET  Secondary Side Synchronous Rectification MOSFET
Features Benefits
Low RDSon (< 2.5m) Lower Conduction Losses Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal dissipation Low Profile (< 1.0 mm) results in Increased Power Density Industry-Standard Pinout  Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability
Standard Pack Orderable part number Package Type Note Form Quantity
IRLHM620TRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRLHM620TR2PBF PQFN 3.3mm x 3.3mm Tape and Reel 400 EOL notice # 259
Absolute Maximum Ratings
   
Parameter Max. Units
VDS Drain-to-Source Voltage 20 V VGS Gate-to-Source Voltage ± 12 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 26 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 21 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V 40 A   ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V 40 IDM Pulsed Drain Current  160 PD @TA = 25°C Power Dissipation  2.7 W PD @TC(Bottom) = 25°C Power Dissipation  37 Linear Derating Factor  0.022 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Notes  through  are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015